IGBT Module Discretes IPM Driver IC Power Quality Products & Filters
Products Discretes
IGBT Discretes MGM4N60T
IGBT Discretes MGM4N60T
IGBT Discretes MGM4N60T

  • Low saturation conduction voltage drop;

  • Low switching loss;

  • High short circuit current tolerance;

  • High parameter consistency;

  • High input impedance;

  •  Positive temperature coefficient, suitable for parallel use.

DATASHEET INQUIRY
SPECIFICATIONS
Device ModelIGBT Discretes MGM4N60T
PackageTO-252
Build-in Diodeyes
Vce (max) @25℃600
Ic (max) @25℃8
Ic (max) @100℃4
Icpuls (max)12
Short-Circuit (uS)5
Tvj (℃)-40~+ 175
VGE (th)(typ)
VCE (sat)(typ) (Vge=15V)2.4
Vf (Typ)1.4
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